Document
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076
1. Applications
• Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments
2. Features
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TPCC8076
1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
33
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
27
A
Drain current (pulsed)
(Note 1)
IDP
81
Power dissipation
(Tc = 25 )
PD
39
W
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9
Power dissipation
(t = 10 s)
(Note 3)
PD
0.7
W
Single-pulse avalanche energy
(Note 4)
EAS
82
mJ
Avalanche current
IAR
27
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2010-06
1
2014-02-17
Rev.3.0
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance
(Tc = 25 ) (t = 10 s) (t = 10 s)
(Note 2) (Note 3)
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.1 mH, RG = 1 Ω, IAR = 27 A
TPCC8076
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max
Unit
3.2
/W
65.7
/W
178
/W
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-02-17
Rev.3.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 33 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
33
V(BR)DSX ID = 10 mA, VGS = -20 V
18
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.3 mA
1.3
Drain-source on-resistance
RDS(ON) VGS = 4.5 V, ID = 13.5 A
VGS = 10 V, ID = 13.5 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1.
ton
tf
toff
TPCC8076
Typ. Max Unit
±10
µA
10
V
2.3
4.9
6.2
mΩ
3.7
4.6
Typ. Max Unit
2500
pF
120
430
2.9
ns
10
9.5
48
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 24 V, VGS = 10 V, ID = 27 A
Qgs1 Qgd
Min Typ. Max Unit
34
nC
7.4
4
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 5)
IDRP
Diode forward voltage
VDSF IDR = 27 A, VGS = 0 V
Note 5: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
81
A
-1.2
V
3
2014-02-17
Rev.3.0
7. Marking
Fig. 7.1 Marking
TPCC8076
4
2014-02-17
Rev.3.0
8. Characteristics Curves (Note)
TPCC8076
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5
2014-02-17
Rev.3.0
TPCC8076
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta (Guaranteed Maximum)
Fig. 8.12 PD - Tc (Guaranteed Maximum)
6
2014-02-17
Rev.3.0
TPCC8076
Fig. 8.13 rth - tw (Guaranteed Maximum)
Fig. 8.14 Safe Operating Area (Guaranteed Maximu.