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TPCC8076 Dataheets PDF



Part Number TPCC8076
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TPCC8076 DatasheetTPCC8076 Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Ab.

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MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 33 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 27 A Drain current (pulsed) (Note 1) IDP 81 Power dissipation (Tc = 25 ) PD 39 W Power dissipation (t = 10 s) (Note 2) PD 1.9 Power dissipation (t = 10 s) (Note 3) PD 0.7 W Single-pulse avalanche energy (Note 4) EAS 82 mJ Avalanche current IAR 27 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-06 1 2014-02-17 Rev.3.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.1 mH, RG = 1 Ω, IAR = 27 A TPCC8076 Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 3.2 /W 65.7 /W 178 /W Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-02-17 Rev.3.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Gate leakage current IGSS VGS = ±16 V, VDS = 0 V  Drain cut-off current IDSS VDS = 33 V, VGS = 0 V  Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 33 V(BR)DSX ID = 10 mA, VGS = -20 V 18 Gate threshold voltage Vth VDS = 10 V, ID = 0.3 mA 1.3 Drain-source on-resistance RDS(ON) VGS = 4.5 V, ID = 13.5 A  VGS = 10 V, ID = 13.5 A  6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Min Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  Crss  Coss  tr See Figure 6.2.1.  ton  tf  toff  TPCC8076 Typ. Max Unit  ±10 µA  10   V    2.3 4.9 6.2 mΩ 3.7 4.6 Typ. Max Unit 2500  pF 120  430  2.9  ns 10  9.5  48  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Condition Qg VDD ≈ 24 V, VGS = 10 V, ID = 27 A Qgs1 Qgd Min Typ. Max Unit  34  nC  7.4   4  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 5) IDRP  Diode forward voltage VDSF IDR = 27 A, VGS = 0 V Note 5: Ensure that the channel temperature does not exceed 150. Min Typ. Max Unit   81 A   -1.2 V 3 2014-02-17 Rev.3.0 7. Marking Fig. 7.1 Marking TPCC8076 4 2014-02-17 Rev.3.0 8. Characteristics Curves (Note) TPCC8076 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2014-02-17 Rev.3.0 TPCC8076 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) Fig. 8.12 PD - Tc (Guaranteed Maximum) 6 2014-02-17 Rev.3.0 TPCC8076 Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximu.


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