Document
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8138
1. Applications
• Power Management Switches
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TPCC8138
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±12
Drain current (DC)
(Note 1)
ID
-18
A
Drain current (pulsed)
(Note 1)
IDP
-54
Power dissipation
(Tc = 25)
PD
39
W
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9
W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.7
W
Single-pulse avalanche energy
(Note 4)
EAS
211
mJ
Avalanche current
IAR
-18
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2011-10
1
2014-01-07
Rev.2.0
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance
(Tc = 25) (t = 10 s) (t = 10 s)
(Note 2) (Note 3)
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -16 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -18 A
TPCC8138
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max
Unit
3.2
/W
65.7
178
/W
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-01-07
Rev.2.0
TPCC8138
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current Drain cut-off current
IGSS IDSS
VGS = ±12 V, VDS = 0 V VDS = -20 V, VGS = 0 V
±0.1
µA
-10
Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
(Note 5)
V(BR)DSS V(BR)DSX
Vth RDS(ON)
ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -1 mA VGS = -1.8 V, ID = -4.5 A
-20
V
-12
-0.5
-1.2
13
42
mΩ
VGS = -2.0 V, ID = -9 A
12
21
VGS = -2.5 V, ID = -9 A
8.1
11
VGS = -4.5 V, ID = -18 A
6.0
7.5
Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Ciss Crss Coss
tr ton tf toff
VDS = -10 V, VGS = 0 V, f = 1 MHz See Figure 6.2.1.
Min Typ. Max Unit
4165
pF
575
620
9.2
ns
17
145
475
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ -16 V, VGS = -5 V, ID = -18 A
Qgs1 Qgd
Min Typ. Max Unit
63
nC
7.5
20
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 6)
IDRP
Diode forward voltage
VDSF IDR = -18 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
-54
A
1.2
V
3
2014-01-07
Rev.2.0
7. Marking
TPCC8138
Fig. 7.1 Marking
4
2014-01-07
Rev.2.0
8. Characteristics Curves (Note)
TPCC8138
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5
2014-01-07
Rev.2.0
TPCC8138
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Cha.