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TPCC8138 Dataheets PDF



Part Number TPCC8138
Manufacturers Toshiba
Logo Toshiba
Description Silicon P-Channel MOSFET
Datasheet TPCC8138 DatasheetTPCC8138 Datasheet (PDF)

MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8138 1. Applications • Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8138 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise speci.

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MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8138 1. Applications • Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8138 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -18 A Drain current (pulsed) (Note 1) IDP -54 Power dissipation (Tc = 25) PD 39 W Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 0.7 W Single-pulse avalanche energy (Note 4) EAS 211 mJ Avalanche current IAR -18 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-10 1 2014-01-07 Rev.2.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -16 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -18 A TPCC8138 Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 3.2 /W 65.7 178 /W Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-01-07 Rev.2.0 TPCC8138 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Drain cut-off current IGSS IDSS VGS = ±12 V, VDS = 0 V VDS = -20 V, VGS = 0 V   ±0.1 µA   -10 Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 5) V(BR)DSS V(BR)DSX Vth RDS(ON) ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -1 mA VGS = -1.8 V, ID = -4.5 A -20   V -12   -0.5  -1.2  13 42 mΩ VGS = -2.0 V, ID = -9 A  12 21 VGS = -2.5 V, ID = -9 A  8.1 11 VGS = -4.5 V, ID = -18 A  6.0 7.5 Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Ciss Crss Coss tr ton tf toff VDS = -10 V, VGS = 0 V, f = 1 MHz See Figure 6.2.1. Min Typ. Max Unit  4165  pF  575   620   9.2  ns  17   145   475  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Condition Qg VDD ≈ -16 V, VGS = -5 V, ID = -18 A Qgs1 Qgd Min Typ. Max Unit  63  nC  7.5   20  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 6) IDRP  Diode forward voltage VDSF IDR = -18 A, VGS = 0 V Note 6: Ensure that the channel temperature does not exceed 150. Min Typ. Max Unit   -54 A   1.2 V 3 2014-01-07 Rev.2.0 7. Marking TPCC8138 Fig. 7.1 Marking 4 2014-01-07 Rev.2.0 8. Characteristics Curves (Note) TPCC8138 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2014-01-07 Rev.2.0 TPCC8138 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Cha.


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