TPCP8404

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8404 Portable Equipment Applications Motor Drive Applications Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=−10V) N Channel RDS (ON) = 38 mΩ(typ.) （VGS=10V) High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 μA (max) (VDS = −30 V) N Channel IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg −30 −30 ±20 −4 −16 1.48 1.23 0.58 0.36 2.6 −2 0.009 150 −55 to 150 Rating 30 30 ±20 4 16 1.48 1.23 W 0.58 0.36 2.6 2 mJ A mJ °C °C Unit V V V A 1．Source1 2．Gate1 3．Source2 4．Gate2 5．Drain2 6．Drain2 7．Drain1 8．Drain1 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1G Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device...