TPCP8701

TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Switching Applications Inverter Lighting Applications Small footprint due to small and thin package High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.14 V (max) High-speed switching : tf = 120 ns (typ.) 0.475 1 4 Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 B A 0.65 2.9±0.1 0.05 M B Maximum Ratings (Ta = 25°C) S 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 Characteristics Collector-base voltage Symbol VCBO VCEX VCEO Rating 100 80 50 7 3.0 5.0 300 1.77 Unit 1.12 -0.12 +0.13 V V V V A mA 1.Emitter1 2.Base1 3.Emitter2 4.Base2 5.Collector2 6.Collector2 7.Collector1 8.Collector1 1.12 -0.12 0.28 +0.1 -0.11 +0.13 Collector-emitter voltage Emitter-base voltage Collector current Base current Single-device operation Single-device value at dual operation Single-device operation Single-device value at dual operation DC (Note 1) VEBO IC ICP IB JEDEC JEITA TOSHIBA ― ― 2-3V1C Pulse (Note 1 ) Weight: 0.017 g (typ.) Collector power dissipation (t = 10s) Pc (Note 2) 0.95 W Figure 1. Circuit configuration (Top View) 8　　7 　6 　5 0.94 Pc (Note 2) 0.54 Tj Tstg 150 −55 to 150 °C °C W Collector power dissipation (DC) Junction temperature Storage temperature range 1　 2　 3　 4 Note 1: Please use devices on condition that the junction temperature is below 150°C. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area...