TPH4R008NH

TPH4R008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R008NH 1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 18 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-07-21 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPH4R008NH 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25) (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 80 ±20 100 60 200 78 2.8 1.6 340 60 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu...