TPN4R203NC

TPN4R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN4R203NC 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Silicon limit) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 53 23 146 22 1.9 0.7 62 23 150 -55 to 150 mJ A  W A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Ha...