TTC009

TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc=25°C Ta=25°C VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 7 V 3 A 5 A 1 A 15 W 2 150 °C −55 to 150 °C JEDEC － JEITA SC-67 TOSHIBA 2-10R1A Weight:1.7g(typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-07-07 TTC009 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain...