TTC0001

TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications High collector voltage: VCEO = 160 V (min) Complementary to TTA0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTC0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit 160 V 160 V 5 V 18 A 35 A 9 A 150 W 150 °C −55 to 150 °C 1.BASE 2.COLLECTOR(HEAT SINK) 3.EMITTER JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight : 4.7 g (typ.) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-01 1 2013-11-01 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off curr...