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UPD5904T7K Dataheets PDF



Part Number UPD5904T7K
Manufacturers Renesas
Logo Renesas
Description CMOS Integrated Circuits High Power SP4T Switch
Datasheet UPD5904T7K DatasheetUPD5904T7K Datasheet (PDF)

Preliminary Data Sheet μPD5904T7K CMOS Integrated Circuits High Power SP4T Switch DESCRIPTION R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package. FEATU.

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Preliminary Data Sheet μPD5904T7K CMOS Integrated Circuits High Power SP4T Switch DESCRIPTION R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package. FEATURES • Low control voltage • Low insertion loss • • • • : Vcont = 1.3 V MIN.,VDD = 2.3 V MIN. : Lins = 0.4 dB TYP. @ f = 1 GHz : Lins = 0.5 dB TYP. @ f = 2 GHz High isolation : ISL = 35 dB TYP. @ f = 1 GHz : ISL = 30 dB TYP. @ f = 2 GHz High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) No DC blocking capacitors required. APPLICATIONS • GSM and UMTS/LTE main Antenna switching • Diversity Antenna switching • Antenna tuning Application ORDERING INFORMATION Part Number μPD5904T7K-E2 Order Number μPD5904T7K-E2-A Package 12-pin plastic QFN (T7K) (Pb-Free) Marking 5904 Supplying Form • Embossed tape 8 mm wide • Pin 10, 11 and 12 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5904T7K-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 1 of 14 Free Datasheet http://www.datasheet4u.com/ μPD5904T7K PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) GND 12 1 2 3 11 10 9 8 7 RF4 1 RF3 2 GND 3 (Top View) GND RFC 12 11 10 RF1 9 RF2 8 GND 7 (Bottom View) 10 11 12 Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Pin Name RF4 RF3 GND VDD Vcont1 Vcont2 GND RF2 RF1 GND RFC GND GND Vcont1 BLOCK DIAGRAM RFC RF1 RF2 RF3 RF4 VDD Vcont1 Vcont2 SW TRUTH TABLE Vcont1 High High Low Low Vcont2 High Low High Low RFC−RF1 ON OFF OFF OFF RFC−RF2 OFF ON OFF OFF RFC−RF3 OFF OFF ON OFF RFC−RF4 OFF OFF OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Control Voltage Input Power Operating Ambient Temperature Storage Temperature Symbol VDD Vcont Pin TA Tstg Ratings 3.6 3.6 +38 −40 to +85 −55 to +125 Unit V V dBm °C °C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Supply Voltage Control Voltage (High) Control Voltage (Low) Note: Vcont ≤ VDD Symbol f VDD Vcont (H) Note Vcont (L) MIN. 0.05 2.3 1.3 0 TYP. − − − − MAX. 6.0 3.3 VDD 0.4 Unit GHz V V V R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 VDD 4 5 6 Vcont2 5904 9 8 7 13 1 2 3 4 5 6 6 5 4 Page 2 of 14 Free Datasheet http://www.datasheet4u.com/ μPD5904T7K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise specified) Parameter Insertion Loss Symbol Lins1 Lins2 Lins3 Lins4 Lins5 Lins6 ISL1 ISL2 ISL3 ISL4 ISL5 ISL6 RL(C)1 RL(C)2 RL(RF)1 RL(RF)2 Pin (0.1 dB)1 Pin (0.1 dB)2 2f0 (L) 3f0 (L) 2f0 (H) 3f0 (H) IMD2(L) IMD2(H) IMD3(L) IMD3(H) RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 Path RFC − RF1, 2, 3, 4 Test Conditions f = 0.05 to 0.5 GHz f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.05 to 0.5 GHz f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.9 GHz f = 2.0 GHz f = 0.9 GHz, Pin = +35 dBm CW f = 2.0 GHz, Pin = +33 dBm CW f = 835 MHz, Pin = +20 dBm f = 45 MHz, Pin = –15 dBm f = 1 950 MHz, Pin = +20 dBm f = 190MHz, Pin = –15 dBm f = 835 MHz, Pin = +20 dBm f = 790 MHz, Pin = –15 dBm f = 1 950 MHz, Pin = +20 dBm f = 1 760 MHz, Pin = –15 dBm f = 836±0.5 MHz, Pin = +21.5 dBm f = 881.5 MHz, Pin = –30 dBm f = 1 880.5±0.5 MHz, Pin = +21.5 dBm f = 1 960 MHz, Pin = –30 dBm f = 836.6 MHz, Pin = +24 dBm f = 1718 MHz, Pin = –20 dBm f = 1 885 MHz, Pin = +24 dBm f = 3 850 MHz, Pin = –20 dBm MIN. − − − − − − 30 25 20 15 15 10 15 10 15 10 +36.0 +36.0 75 70 75 70 − − − − TYP. 0.35 0.40 0.50 0.55 0.60 0.75 40 35 30 25 25 20 25 17 25 17 +38.0 Note MAX. 0.50 0.55 0.65 0.75 0.80 0.95 − − − − − − − − − − − − − − − − −93 −100 −105 −105 Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBc dBc dBc Isolation RFC − RF1, 2, 3, 4 Return Loss (RFC) Return Loss (RF1,2,3,4) 0.1 dB Loss Compression Inp.


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