2SD2651

2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.2.00 Aug.10.2005 Features High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.datasheet4u.com/ 2SD2651 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Emitter cutoff current Base to emitter voltage DC current transfer ratio Collector to emitter saturation voltage Symbol ICBO ICEO IEBO VBE hFE VCE(sat) Min — — — — 80 — Typ — — — — — — Max 0.1 0.1 10 0.75 160 0.5 Unit µA µA µA V — V Test Conditions VCB = 300V, IE = 0 VCE = 300V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 6V, I C = 1mA VCE = 6V, IC = 2mA IC = 30mA, IB = 3mA Rev.2.00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.datasheet4u.com/ 2SD2651 Main Characteristics Maximum Collector Dissipation Curve 1.5 10 Typical Output Characteristics 100µA 60µA Pulse Test 50µA 40µA Collector Dissipation PC (W) Collector Current IC (mA) 8 80µA 1.0 6 4 0.5 30µA 20µA IB = 10 µA 2 0 50 100 150 0 20 40 60 80 100 Ambient Temperature Ta (°C)...