2SD2659

Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit: mm For power switching ■ Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 20 2 150 −55 to +150 °C °C Unit V 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 V V A A W B 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE VCE(sat) fT Conditions IC = 10 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4.0 V, IC = 0.5 A IC = 2.0 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 1 500 1.2 Typ Max Unit V µA µA ...