2SK3609-01

2SK3609-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C Ratings Unit V 200 V 170 A Continuous drain current ±18 A ±2.7 ** A Pulsed drain current ID(puls] ±72 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS *2 18 mJ Maximum Avalanche Energy EAS *1 125.5 kV/µs Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Tc=25°C 105 W Ta=25°C 2.4 ** Operating and storage Tch +150 °C temperature range Tstg °C -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 200V *5 VGS=-30V Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output cap...