2SK3674-01JS

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L EEESee Page 2/4 S EEESee Page 3/4 SJ EEESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25 Ž @ Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataSheet4U.com Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV/dt Maximum Power Dissipation This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. unless otherwise specified) Ratings 900 ±7 ±28 ±30 7 269.5 20 5 225 1.67 150 -55 ` +150 Units V A A V A *1 kV/us kV/us *2 W W mJ Symbols VDS ID ID(pulse) VGS IAR EAS dVDS/dt dV/dt PD@—‚s c=25Ž PD @Ta=25Ž Tch Tstg Operating and Storage Temperature range 3)Electrical Characteristics (Tch=25Ž unless otherwise specified) min. 900 3.0 --------------------7 --typ. ------------980 120 6 28 9 8 --1.0 max. --5.0 50 500 100 2.0 --------------1.5 Units V V µA µA nA Ω pF Items Symbols Test Conditions ID=250uA VGS=0V Drain-Source Breakdown Voltage BVDSS ID=250uA VDS=VGS VGS(th) Gate Threshold Voltage VDS=900V Tch=25 Zero Gate Voltage Drain Current IDSS VGS=0V Tch=125 VGS=±30V VDS=0V IGSS Gate-Source Leakage Current Drain-Source On-Sta...