2SK3691-01MR

2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg VISO Ratings 600 600 4.5 ±18 ±30 4.5 261.1 2.8 20 5 28 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=1.8A,L=148mH, VCC=60V,RG=50Ω EAS limited by maximum channel temperature kV/µs VDS< =600V and Avalanche current. kV/µs Note *4 See to the ‘Avalanche Energy’ graph Tc=25°C W Note *3:Repetitive rating:Pulse width limited by Ta=25°C maximum channel temperature. °C See to the ‘Transient Thermal impedance’ °C graph. kVrms t=60sec. f=60Hz < -ID, -di/dt = 50A/µs,VCC= < BVDSS,Tch= <150°C Note *4:IF = Electrica...