2SK3693-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown...
2SK3693-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
200305
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Ratings Unit 450 V DS V VDSX *5 450 V Equivalent Continuous drain current ID ±17 A Pulsed drain current ID(puls] ±68 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 17 A Maximum Avalanche Energy EAS *1 221.9 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Gate(G) Max. power dissipation PD Ta=25°C 2.16 W Tc=25°C 80 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage Viso *6 2000 V *1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS< = -ID, -di/dt=50A/µs, Vcc < = 450V *5 VGS=-30V *6 f=6-Hz, t=60sec. Item Drain-source voltage
circuit schematic
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total ...
