2SK3695-01

2SK3695-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 500 ID ±13 ID(puls] ±52 VGS ±30 IAS 13 EAS dV DS/dt dV/dt -di/dt PD Tch Tstg 202 20 5 100 2.02 195 +150 -55 to +150 Unit V A A V A mJ kV/s kV/µs A/µs W Remarks Tch < =150°C *1 VDS < = 500V *2 *3 Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph < *2 IF < = -ID, -di/dt=100A/µs, VCC < = BVDSS, Tch =150°C *3 IF < = BVDSS, Tch < = 150°C = -ID, dV/dt=5kV/µs, VCC < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse tran...