2SK3696-01MR

2SK3696-01MR FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Max. power dissipation Symbol Ratings V DS 500 ID ±13 ID(puls] ±52 VGS ±30 IAS 13 EAS dV DS/dt dV/dt -di/dt PD 202 Unit V A A V A mJ Remarks Tch < =150°C *1 Equivalent circuit schematic Drain(D) kV/s 20 VDS < = 500V 5 kV/µs *2 100 A/µs *3 2.16 W Ta=25°C 70 Tc=25°C Operating and storage Tch +150 °C temperature range Tstg °C -55 to +150 Isolation voltage VISO 2 kVrms t=60sec f=60Hz *1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph *2 IF < -ID, -di/dt=100A/µs, VCC < BVDSS, Tch < 150°C = -ID, dV/dt=5kV/µs, VCC = *3 IF < BVDSS, Tch <= 150°C < = = = Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Inp...