2SK3628

SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features High-speed switching Low ON resistance Ron + 0 .2 8 .7 -0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 20 80 570 3 100 150 -55 to +150 Unit V V A A mJ W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SK3628 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VDSF Vth IDSS IGSS Testconditons ID = 1 mA, VGS = 0 IDR = 20 A, VGS = 0 VDS = 25 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = 30 V, VDS = 0 Transistors IC Min 230 Typ Max Unit V -1.5 1.7 3.7 100 1 65 7 14 230...