MOSFET. 2SK3628 Datasheet

2SK3628 Datasheet PDF


Part

2SK3628

Description

Silicon N-channel Power MOSFET

Manufacture

Kexin

Page 2 Pages
Datasheet
Download 2SK3628 Datasheet


2SK3628 Datasheet
SMD Type
TransistIoCrs
Silicon N-channel Power MOSFET
2SK3628
Features
High-speed switching
Low ON resistance Ron
No secondary breakdown
Avalanche energy capability guaranteed
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation Ta = 25
Power dissipation
Channel temperature
Storage temperature
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Symbol
VDSS
VGSS
ID
IDP
EAS
PD
Tch
Tstg
Rating
230
30
20
80
570
3
100
150
-55 to +150
Unit
V
V
A
A
mJ
W
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2SK3628 Datasheet
SMD Type
TransistIoCrs
Electrical Characteristics Ta = 25
Parameter
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2SK3628
Symbol
Testconditons
VDSS ID = 1 mA, VGS = 0
VDSF IDR = 20 A, VGS = 0
Vth VDS = 25 V, ID = 1 mA
IDSS VDS = 184 V, VGS = 0
IGSS VGS = 30 V, VDS = 0
RDS(on) VGS = 10 V, ID = 10 A
Yfs VDS = 25 V, ID = 10 A
Ciss
Coss VDS = 25 V, VGS = 0, f = 1 MHz
Crss
td(on) VDD 100 V, ID = 15 A
tr RL = 6.7 Ù, VGS = 10 V
td(off)
tf
Min Typ Max
230
-1.5
1.7 3.7
100
1
65 85
7 14
2300
330
30
35
26
220
36
Unit
V
V
V
ìA
ìA
S
pF
pF
pF
ns
ns
ns
ns
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Features Datasheet pdf SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 + 0 .1 1 .2 7 -0 .1 Tra nsistors IC Unit: mm +0.1 1.27-0.1 +0. 2 4.57-0.2 Features High-speed switchi ng Low ON resistance Ron + 0 .2 8 .7 - 0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27 -0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 - 0 .2 2.54 +0.2 0.4-0.2 Absolute Maxi mum Ratings Ta = 25 Parameter Drain-sou rce surrender voltage Gate-source surre nder voltage Drain current Peak drain c urrent Avalanche energy capability Powe r dissipation Ta = 25 Power dissipation Channel temperature Storage temperatur e Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 20 80 570 3 100 150 -5 5 to +150 Unit V V A A mJ W 5 .6 0 1 G ate 2 Drain 3 Source www.kexin.com.cn 1 Free Datasheet http://www.datasheet 4u.com/ SMD Type 2SK3628 Electrical Ch aracteristics Ta = 25 Parameter Gate-dr ain surrender voltage Diode forward voltage Gate threshold volt.
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