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NTST20120CT Dataheets PDF



Part Number NTST20120CT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Datasheet NTST20120CT DatasheetNTST20120CT Datasheet (PDF)

NTST20120CT, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.54 V at IF = 5 A Features http://onsemi.com VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 120 VOLTS PIN CONNECTIONS 1 2, 4 3 4 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Low.

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NTST20120CT, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.54 V at IF = 5 A Features http://onsemi.com VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 120 VOLTS PIN CONNECTIONS 1 2, 4 3 4 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 4 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 TO−220AB CASE 221A STYLE 6 4 12 3 I2PAK CASE 418D STYLE 3 3 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 TO−220FP CASE 221AH 3 D2PAK CASE 418B ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 4 1 Publication Order Number: NTST20120CT/D Free Datasheet http://www.datasheet4u.com/ NTST20120CT, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 130°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 135°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Storage Temperature Voltage Rate of Change (Rated VR) Per device Per diode Per device Per diode Symbol VRRM VRWM VR IF(AV) Value 120 Unit V 20 10 40 20 120 −40 to +150 −40 to +150 10,000 A IFRM A IFSM TJ Tstg dv/dt A °C °C V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA NTST20120CTG NTSB20120CT−1G 2.5 70 NTSB20120CTG 1.43 46.8 NTSJ20120CTG 4.42 105 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Cu.


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