(PDF) NTSB20120CT-1G Datasheet PDF | ON Semiconductor





NTSB20120CT-1G Datasheet PDF

Part Number NTSB20120CT-1G
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Manufacture ON Semiconductor
Total Page 8 Pages
PDF Download Download NTSB20120CT-1G Datasheet PDF

Features: Datasheet pdf NTST20120CT, NTSJ20120CTG, NTSB20120CT-1 G, NTSB20120CTG, NTSB20120CTT4G Very Lo w Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.54 V at IF = 5 A Features http://onsemi.co m VERY LOW FORWARD VOLTAGE, LOW LEAKAG E SCHOTTKY BARRIER RECTIFIERS 20 AMPERE S, 120 VOLTS PIN CONNECTIONS 1 2, 4 3 4 • Fine Lithography Trench−based S chottky Technology for Very Low • • • • • • Forward Voltage and Lo w Leakage Fast Switching with Exception al Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Co mpliance Low Thermal Resistance High Su rge Capability Pb−Free and Halide−F ree Packages are Available 4 Typical Applications • Switching Power Suppl ies including Notebook / Netbook Adapte rs, • • • • ATX and Flat Panel Display High Frequency and DC−DC Conv erters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumenta tion 1 2 TO−220AB CASE 221A STYLE 6 4 12 3 I2PAK CASE 418D STYLE 3 3 Mechanical Characteristics.

Keywords: NTSB20120CT-1G, datasheet, pdf, ON Semiconductor, Very, Low, Forward, Voltage, Trench-based, Schottky, Rectifier, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

NTSB20120CT-1G datasheet
NTST20120CT,
NTSJ20120CTG,
NTSB20120CT-1G,
NTSB20120CTG,
NTSB20120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.54 V at IF = 5 A
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
PbFree and HalideFree Packages are Available
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
http://onsemi.com
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 20 AMPERES,
120 VOLTS
PIN CONNECTIONS
1
2, 4
3
44
1 23
TO220AB
CASE 221A
STYLE 6
4
1 23
I2PAK
CASE 418D
STYLE 3
1 23
TO220FP
CASE 221AH
D2PAK
CASE 418B
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 4
1
Publication Order Number:
NTST20120CT/D
Free Datasheet http://www.datasheet4u.com/

NTSB20120CT-1G datasheet
NTST20120CT, NTSJ20120CTG, NTSB20120CT1G, NTSB20120CTG,
NTSB20120CTT4G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Rating
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Per device
Per diode
VRRM
VRWM
VR
IF(AV)
Per device
Per diode
IFRM
IFSM
Value
120
20
10
40
20
120
Unit
V
A
A
A
Operating Junction Temperature
TJ
40 to +150
°C
Storage Temperature
Tstg 40 to +150 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Maximum Thermal Resistance per Diode
JunctiontoCase
JunctiontoAmbient
RRqqJJCA
NTST20120CTG
NTSB20120CT1G
2.5
70
NTSB20120CTG
1.43
46.8
NTSJ20120CTG
4.42
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
((IIFF
=
=
150AA, T, TJ J==112255°C°C) )
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
Symbol
vF
IR
Typ
0.62
0.90
0.54
0.64
12
6
17
Max Unit
V
1.10
0.72
mA
mA
700 mA
100 mA
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/




Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)