DatasheetsPDF.com

STPS2545CFP Dataheets PDF



Part Number STPS2545CFP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description POWER SCHOTTKY RECTIFIER
Datasheet STPS2545CFP DatasheetSTPS2545CFP Datasheet (PDF)

® STPS2545CT/CG/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 12.5 A 45 V 175 °C 0.57 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s s K A1 A2 K TO-220AB STPS2545CT A2 A1 D2PAK STPS2545CG DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. T.

  STPS2545CFP   STPS2545CFP



Document
® STPS2545CT/CG/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 12.5 A 45 V 175 °C 0.57 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s s K A1 A2 K TO-220AB STPS2545CT A2 A1 D2PAK STPS2545CG DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB D2PAK TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt * : Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Parameter Repetitive peak reverse voltage A2 K A1 TO-220FPAB STPS2545CFP Value 45 30 Tc = 160°C Tc = 140°C Per diode Per device 12.5 25 200 1 2 4800 - 65 to + 175 175 10000 Unit V A A tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C A A A W °C °C V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/6 July 2003 - Ed: 2A Free Datasheet http://www.datasheet4u.com/ STPS2545CT/CG/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to ambient Parameter TO-220AB / D PAK TO-220FPAB TO-220AB / D PAK TO-220FPAB Rth (c) TO-220AB / D2PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * V F* Reverse leakage Current Forward Voltage drop Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% 2 2 Value Per diode Total Coupling 1.6 4 1.1 3.5 0.6 3 Unit °C/W °C/W °C/W Min. Typ. 9 Max. 125 25 0.57 0.84 0.72 Unit µA mA V VR = VRRM IF = 12.5 A IF = 25 A IF = 25 A 0.65 0.50 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.012 x IF2(RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(AV)(W) 10 9 8 7 6 5 4 3 2 1 0 0.0 2.5 5.0 7.5 10.0 T IF(AV)(A) 14 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-c) TO-220AB/D²PAK 12 δ=1 10 8 6 Rth(j-a)=50°C/W 4 T 2 IF(AV)(A) δ=tp/T 12.5 tp 0 15.0 0 δ=tp/T 25 tp Tamb(°C) 50 75 100 125 150 175 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/6.


STPS2545C-Y STPS2545CFP UDZS22B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)