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STPS2545CT/CG/CFP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 12.5 A 45 V 175 °C 0.57 V
A1 K A2
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
s s s s s
K A1
A2
K
TO-220AB STPS2545CT
A2 A1
D2PAK STPS2545CG
DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB D2PAK TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt * : Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Parameter Repetitive peak reverse voltage
A2 K A1
TO-220FPAB STPS2545CFP
Value 45 30 Tc = 160°C Tc = 140°C Per diode Per device 12.5 25 200 1 2 4800 - 65 to + 175 175 10000
Unit V A A
tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C
A A A W °C °C V/µs
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a )
1/6
July 2003 - Ed: 2A
Free Datasheet http://www.datasheet4u.com/
STPS2545CT/CG/CFP
THERMAL RESISTANCES Symbol Rth (j-c) Junction to ambient Parameter TO-220AB / D PAK TO-220FPAB TO-220AB / D PAK TO-220FPAB Rth (c) TO-220AB / D2PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * V F* Reverse leakage Current Forward Voltage drop Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
2 2
Value Per diode Total Coupling 1.6 4 1.1 3.5 0.6 3
Unit °C/W °C/W °C/W
Min.
Typ. 9
Max. 125 25 0.57 0.84 0.72
Unit µA mA V
VR = VRRM IF = 12.5 A IF = 25 A IF = 25 A 0.65 0.50
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.012 x IF2(RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature (δ=0.5).
PF(AV)(W)
10 9 8 7 6 5 4 3 2 1 0 0.0 2.5 5.0 7.5 10.0
T
IF(AV)(A)
14
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5
Rth(j-a)=Rth(j-c) TO-220AB/D²PAK
12
δ=1
10 8 6
Rth(j-a)=50°C/W
4
T
2
IF(AV)(A)
δ=tp/T
12.5
tp
0 15.0 0
δ=tp/T
25
tp
Tamb(°C)
50 75 100 125 150 175
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
2/6.