2SD1622

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SD1622 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 Min Transistors Typ Max 100 100 560 Unit nA nA 150 8.5 120 0.9 60 50 5 40 300 1.2 MHz pF mV V V V V ns VCE(sat) IC = 500 mA , IB = 50 mA VBE(sat) IC = 500 mA , IB = 50 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Storage time tstg 350 ns Turn-off time tf 30 ns hFE Classification Marking Rank hFE R 100 200 S 140 280 DE T 200 4...