(PDF) 2SD1624 Datasheet PDF | Kexin





2SD1624 Datasheet PDF

Part Number 2SD1624
Description NPN Epitaxial Planar Silicon Transistor
Manufacture Kexin
Total Page 2 Pages
PDF Download Download 2SD1624 Datasheet PDF

Features: Datasheet pdf SMD Type Transistors NPN Epitaxial Plan ar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation vo ltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Colle ctor-base voltage Collector-emitter vol tage Emitter-base voltage Collector cur rent Collector current (pulse) Collecto r dissipation Junction temperature Stor age temperature * Mounted on ceramic bo ard(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 6 3 6 500 1.5 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Dat asheet http://www.datasheet4u.com/ SMD Type 2SD1624 Electrical Characteristic s Ta = 25 Parameter Collector cutoff cu rrent Emitter cutoff current DC current gain Gain bandwidth product Output cap acitance Collector-emitter saturation v oltage Base-emitter saturation voltage Collector-base breakdown voltage Collec tor-emitter breakdown voltage Emitter-b ase breakdown voltage Turn-on timie Sto rage time Turn-off time Symbol ICBO IEBO hFE fT Cob Testcondito.

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2SD1624 datasheet
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1624
Features
Low collector-to-emitter saturation voltage.
Fast switching speed.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2X0.8mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC *
Tj
Tstg
Rating
60
50
6
3
6
500
1.5
150
-55 to +150
Unit
V
V
V
A
A
mW
W
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Free Datasheet http://www.datasheet4u.com/

2SD1624 datasheet
SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on timie
Storage time
Turn-off time
2SD1624
Symbol
Testconditons
ICBO VCB = 40 V, IE=0
IEBO VEB = 4 V, IC=0
hFE VCE = 2 V , IC = 100 mA
fT VCE = 10 V , IC = 50 mA
Cob VCB = 10 V , f = 1.0MHz
VCE(sat) IC = 2 A , IB = 100 mA
VBE(sat) IC = 2 A , IB = 100 mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ton
tstg
tf
hFE Classification
Marking
Rank
hFE
R
100 200
DG
S
140 280
T
200 400
U
280 560
Transistors
Min Typ Max Unit
1 ìA
1 ìA
100 560
150 MHz
25 pF
0.19 0.5 V
1.2 V
60 V
50 V
6V
70 ns
650 ns
35 ns
2 www.kexin.com.cn
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