Transistors
2SA2046
Silicon PNP epitaxial planer type
Unit: mm
0.40+0.10 −0.05 3
0.65±0.15
For DC-DC converter
1.45
...
Transistors
2SA2046
Silicon
PNP epitaxial planer type
Unit: mm
0.40+0.10 −0.05 3
0.65±0.15
For DC-DC converter
1.45
0.16+0.10 −0.06
Low collector to emitter saturation voltage VCE(sat) Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
1.50+0.25 −0.05
+0.20 2.80− 0.30
I Features
1 0.95
2 0.95
1.90±0.20
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
2.90+0.20 −0.05
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating −30 −20 −5 −5 −1.5 400 150 −55 to +150 mm3
Unit V V V A A mW °C °C
10°
0 ∼ 0.1 1.10+0.20 −0.10
0.65±0.15
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
Marking Symbol: 3Z
Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage * Collector output capacitance Transition frequency Note) *: Pulse measurement Symbol VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, , IC = 0 VCE = −2 V, IC = −100 mA IC = −500 mA, IB = −25 mA VCB = −10 V, IE = 0, f = 1 MHz VCB = −10 V, IE = 20 mA f = 200 MHz Min −30 −20 −5 160 − 50 25 170 ...