2SC5702

2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 8 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “ZS-”. Free Datasheet http://www.datasheet4u.com/ 2SC5702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15    80  6.5 11  Typ 18.5    120 0.85 8.0 13 1.05 Max  1 1 10 160 1.2   1.9 Unit V µA mA mA V pF GHz dB dB Test Conditions I C = 10 µA, I E = 0 VCB = 10 V, IE = 0 VCE = 4 V, RBE = ∞ VEB = 1.5V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0 f = 1 MHz VCE = 1 V, IC = 5 mA f = 1 MHz VCE = 1 V, IC = 5 mA f = 900 MHz VCE = 1 V, IC = 5 mA f = 900 MHz 2 Free Datasheet http://www.datasheet4u.com/ 2SC5702 Maximum Collector Dissipation Curve 160 50 Collecter Voltage vs. Collecter to Em...