Transistor. 2SD1620 Datasheet

2SD1620 Datasheet PDF


Part

2SD1620

Description

NPN Epitaxial Planar Silicon Transistor

Manufacture

Kexin

Page 1 Pages
Datasheet
Download 2SD1620 Datasheet


2SD1620 Datasheet
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1620
Features
Less power dissipation because of low VCE(sat),
permitting more flashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low
current to high current.
Ultrasmall size supports high-density, ultrasmallsized
hybrid IC designs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2×0.8mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC *
Tj
Tstg
Rating
30
25
6
3
5
500
1.3
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 20 V, IE=0
IEBO VEB = 4 V, IC=0
hFE VCE = 2 V , IC = 3 A
fT VCE = 10 V , IC = 50 mA
Cob VCB = 10 V , f = 1.0MHz
VCE(sat) IC = 3 A , IB = 60 mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEX IC = 1mA , VBE = 3 V
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Min Typ Max Unit
100 nA
100 nA
140 210
200 MHz
30 pF
0.3 0.4 V
30 V
20 V
10 V
6V
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Features Datasheet pdf SMD Type Transistors NPN Epitaxial Plan ar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE(sat), permitting more flashes of li ght to be emitted. Large current capaci ty and highly resistant to breakdown. E xcellent linearity of hFE in the region from low current to high current. Ultr asmall size supports high-density, ultr asmallsized hybrid IC designs. Absolut e Maximum Ratings Ta = 25 Parameter Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Collector current (pulse) Collec tor dissipation Junction temperature St orage temperature * Mounted on ceramic board(250mm2×0.8mm) Symbol VCBO VCEO V EBO IC ICP PC PC * Tj Tstg Rating 30 25 6 3 5 500 1.3 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector cutoff cur rent Emitter cutoff current DC current gain Gain bandwidth product Output capa citance Collector-emitter saturation vo ltage Collector-base breakdown voltage Collector-emitter breakdo.
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