SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SD1621
Features
Adoption of FBET, MBIT processes. Low co...
SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SD1621
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 2 5 500 1.3 150 -55 to +150 Unit V V V A A mW W
www.kexin.com.cn
1
Free Datasheet http://www.datasheet4u.com/
SMD Type
2SD1621
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz
Transistors
Min
Typ
Max 0.1 0.1
Unit ìA ìA
100 150 19 0.18 0.85 30 25 6 60
560 MHz pF 0.4 1.2 V V V V V ns
VCE(sat) IC = 1.5 A , IB = 75 mA VBE(sat) IC = 1.5 A , IB = 75 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton
...