IXDT30N120

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA G IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 C G C VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V TO-247 AD (IXDH) E IXDH 30N120 IXDT 30N120 E IXDH 30N120 D1 IXDT 30N120 D1 G C E C (TAB) TO--268 AA (IXDT) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 60 38 76 ICM = 50 VCEK < VCES 10 300 135 -55 ... +150 -55 ... +150 300 V V V V A A A A µs W W °C °C °C q q G E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Features q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space savings High power density IXDT: surface mountable high power package 1.1/10 Nm/lb.in. 6 g q Typical Applications q Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 T...