N-Ch Enhancement Mode Power MOSFET
SSG4842N
Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A...
Description
SSG4842N
Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8
B
L
D M
FEATURES
Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology
A C N J H G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
K
F
REF. H J K L M N
E
REF. A B C D E F G
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
S
D D D D
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K Leader Size 13 inch
S S G
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG
Ratings
40 20 23 19 60 2.9 3.1 2.2 -55~150
Unit
V V A A A A W W ° C
Continuous Source Current (Diode Conduction) Total Power Dissipation
1
TA = 25° C TA = 70° C
Operating Junction & Storage Temperature Range
Thermal Resistance Rating
Thermal Resistance J...
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