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SSG4890N

SeCoS

Dual-N Enhancement Mode Power MOSFET

SSG4890N Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Prod...


SeCoS

SSG4890N

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Description
SSG4890N Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current Power Dissipation 1 2 Symbol VDS VGS ID @ TA = 25°C IDM IS PD @ TA = 25°C TJ, TSTG THERMAL RESISTANCE RATINGS Ratings 150 Unit V V A A A W °C °C / W °C / W ±20 5.2 20 1.6 2.1 -55 ~ 150 40 80 Continuous Source Current (Diode Conduction) 1 Operating Junction & Storage Temperature Ran...




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