Dual-N Enhancement Mode Power MOSFET
SSG4890N
Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Prod...
Description
SSG4890N
Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8
B
L
D M
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
A
C N J
K
H
G
F
E
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K LeaderSize 13’ inch
REF. A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
S G S G
D
D D D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current Power Dissipation
1 2
Symbol
VDS VGS ID @ TA = 25°C IDM IS PD @ TA = 25°C TJ, TSTG THERMAL RESISTANCE RATINGS
Ratings
150
Unit
V V A A A W °C °C / W °C / W
±20
5.2
20
1.6 2.1 -55 ~ 150 40 80
Continuous Source Current (Diode Conduction) 1 Operating Junction & Storage Temperature Ran...
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