2N4427

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts mW/ ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO ICEO ICEX IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector Cutoff Current (VCE = 12 Vdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, VBE = -1.5 Vdc) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 40 20 Value Typ. Max. 20 100 100 Unit Vdc Vdc µA µA µA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 360 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) ...