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2N4449U Dataheets PDF



Part Number 2N4449U
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN SILICON SWITCHING TRANSISTOR
Datasheet 2N4449U Datasheet2N4449U Datasheet (PDF)

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc W W 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 .

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TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc W W 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 1.2(2) PT (6) All UB 0.40 1.4(7) (3) All U 0.60 1.5(4) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 TO-18* (TO-206AA) 2N2369A 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 2N2369A; 2N4449 All UA All UB All U Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 All UA All UB All U 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) Derate linearly 8.55 mW/0C above TC = +63.50C TO-46 (TO-206AB) 2N4449 Symbol Max. 146 125 135 117 325 350 437 291 0 Unit RθJC C/mW SURFACE MOUNT UA* RθJA 0 C/mW SURFACE MOUNT UB* 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly 2.29 mW/0C above TC = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63.50C SURFACE MOUNT U* *See appendix A for package outline 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICES Min. 15 0.4 10 0.25 10 0.2 µAdc Max. Unit Vdc µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 20 Vdc Emitter-Base Breakdown Voltage VEB = 4.5 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Base Breakdown Voltage VCB = 40 Vdc Collector-Base Cutoff Current VCB = 32 Vdc IEBO ICBO ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 0.35 Vdc IC = 30 mAdc, VCE = 0.4 Vdc IC = 10 mAdc, VCE = 1.0 Vdc IC = 100 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc 40 30 40 20 120 120 120 120 0.20 0.25 0.45 0.70 0.80 0.85 0.90 1.20 hFE VCE(sat) Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (1)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. hfe Cobo Cibo 5.0 10 4.0 5.0 pF pF SWITCHING CHARACTERISTICS Turn-On Time IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc Turn-Off Time IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc Charge Storage Time IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc t on 12 18 13 ηs ηs ηs t off t s 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


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