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MT29F2G16AAD Dataheets PDF



Part Number MT29F2G16AAD
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F2G16AAD DatasheetMT29F2G16AAD Datasheet (PDF)

Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features • Open NAND Flash Interface (ONFI) 1.0-compliant • Single-level cell (SLC) technology • Organization – Page size: • x8: 2,112 bytes (2,048 + 64 bytes) • x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks • READ performance – Random READ: 25µs – Sequential READ: 25ns (3.3V) – Sequ.

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Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features • Open NAND Flash Interface (ONFI) 1.0-compliant • Single-level cell (SLC) technology • Organization – Page size: • x8: 2,112 bytes (2,048 + 64 bytes) • x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks • READ performance – Random READ: 25µs – Sequential READ: 25ns (3.3V) – Sequential READ: 35ns (1.8V) • WRITE performance – PROGRAM PAGE: 220µs (TYP , 3.3V) – PROGRAM PAGE: 300µs (TYP , 1.8V) – BLOCK ERASE: 500µs (TYP) • Data retention: 10 years • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1 • Industry-standard basic NAND Flash command set • Advanced command set: – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – BLOCK LOCK (1.8V only) – PROGRAMMABLE DRIVE STRENGTH – READ UNIQUE ID • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion • WP# signal: write protect entire device • RESET required as first command after power-up • INTERNAL DATA MOVE operations supported • Alternate method of device initialization (Nand_Init) after power up4 (Contact Factory) Figure 1: 63-Ball VFBGA Options • Density2: 2Gb (single die) • Device width: x8, x16 • Configuration: # of die # of CE# # of R/B# I/O 1 1 1 Common • VCC: 2.7–3.6V • VCC: 1.65–1.95V • Package – 48-pin TSOP type I CPL3 (lead-free plating, 3.3V only) – 63-ball VFBGA (lead-free, 1.8V only) • Operating temperature: – Commercial (0°C to +70°C) – Extended (–40°C to +85°C) 1. See “Error Management” on page 61. 2. For part numbering and markings, see Figure 2 on page 2 and Figure 3 on page 3. 3. CPL = center parting line 4. Available only in 1.8V VFBGA package. PDF: 09005aef82784784 / Source: 09005aef82784840 NDA_2gb_nand_m59a__1.fm - Rev. A 8/08 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Free Datasheet http://www.datasheet4u.com/ Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Part Numbering Information Part Numbering Information Micron® NAND Flash devices are available in several different configurations and densities (see Figure 2). Figure 2: Part Number Chart (3.3V) MT 29F 2G 08 Micron Technology Product Family 29F = Single-supply NAND Flash memory A A D WP ES D Design Revision D = Fourth revision Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample Density 2G = 2Gb Device Width 08 = 8 bits 16 = 16 bits Operating Temperature Range Blank = Commercial (0°C to +70°C) ET = Extended (–40°C to +85°C) Classification # of die # of CE# # of R/B# I/O Reserved for Future Use Blank A 1 1 1 Common Flash Performance Operating Voltage Range A = 3.3V (2.7–3.6V) Blank = Standard Package Code Feature Set D = Feature set D WP = 48-pin TSOP CPL PDF: 09005aef82784784 / Source: 09005aef82784840 NDA_2gb_nand_m59a__1.fm - Rev. A 8/08 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Free Datasheet http://www.datasheet4u.com/ Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Part Numbering Information Figure 3: Part Number Chart (1.8V) MT 29F 2G 08 Micron Technology Product Family 29F = Single-supply NAND Flash memory A B D HC ES :D Design Revision D = Fourth revision Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample Density 2G = 2Gb Device Width 08 = 8 bits 16 = 16 bits Operating Temperature Range Blank = Commercial (0°C to +70°C) ET = Extended (–40°C to +85°C) Classification # of die # of CE# # of R/B# I/O Reserved for Future Use Blank A 1 1 1 Common Flash Performance Operating Voltage Range B = 1.8V (1.65–1.95V) Blank = Standard Package Code Feature Set D = Feature set D HC = 63-ball VFBGA (lead-free) Valid Part Number Combinations After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. PDF: 09005aef82784784 / Source: 09005aef82784840 NDA_2gb_nand_m59a__1.fm - Rev. A 8/08 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Free Datasheet http://www.datasheet4u.com/ M.


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