EFC6601R

Ordering number : ENA2151 EFC6601R SANYO Semiconductors DATA SHEET EFC6601R Features N-Channel Silicon MOSFET Lithium-ion battery charging and discharging switch 2.5V drive Common-drain type 2KV ESD HBM Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Conditions Ratings 24 ±12 13 60 2.0 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7073-001 2.7 6 5 4 Product & Package Information Package : EFCP JEITA, JEDEC : Minimum Packing Quantity : 5,000 pcs./reel EFC6601R-TR Taping Type : TR Marking 1.81 MA TR LOT No. 1 2 3 Electrical Connection 4, 6 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 0.65 0.2 Rg 0.65 5 0.3 SANYO : EFCP2718-6CE-020 2 Rg Rg=200Ω 1, 3 http://www.sanyosemi.com/en/network/ N2112 TKIM TC-00002837/HD 121009 PF No. A2151-1/8 Free Datasheet http://www.datasheet4u.com/ EFC6601R Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) | yfs | RSS(on)1 RSS(on)2 Static Source-to-Source On-State Resistance ...