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HRW0202A Dataheets PDF



Part Number HRW0202A
Manufacturers Renesas
Logo Renesas
Description Silicon Schottky Barrier Diode
Datasheet HRW0202A DatasheetHRW0202A Datasheet (PDF)

HRW0202A Silicon Schottky Barrier Diode for Rectifying REJ03G0152-0600Z (Previous: ADE-208-209E) Rev.6.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0202A Laser Mark S17 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Anode 2. Anode 3. Cathode Rev.6.00, Dec.15.2003, page 1 of 5 Free Datasheet http://www.datasheet4u.c.

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HRW0202A Silicon Schottky Barrier Diode for Rectifying REJ03G0152-0600Z (Previous: ADE-208-209E) Rev.6.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0202A Laser Mark S17 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Anode 2. Anode 3. Cathode Rev.6.00, Dec.15.2003, page 1 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0202A Absolute Maximum Ratings *1 (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse Symbol VRMM * IO * Tj Tstg 2 3 1 Value 20 200 3 125 –55 to +125 Unit V mA A °C °C IFSM * Electrical Characteristics *1 (Ta = 25°C) Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min — — — Typ — — 350 Max 0.40 50 — Unit V µA Test Condition IF = 100 mA VR = 20 V *2 °C/W Polyimide board Notes: 1. Per one device 2. Polyimide board 20h×15w×0.8t 1.5 3.0 1.5 1.5 0.8 Unit: mm Rev.6.00, Dec.15.2003, page 2 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0202A Main Characteristic 1.0 Pulse test 10–1 Ta = 75°C 10 –4 10–3 Pulse test Ta = 75°C 10–2 Reverse current IR (A) Forward current IF (A) 10–5 Ta = 25°C 10–3 Ta = 25°C 10–6 10 –4 10–5 10–7 10–6 0 0.1 0.2 0.3 0.4 0.5 0.6 10–8 0 5 10 15 20 25 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 100 f = 1MHz Pulse test Capacitance C (pF) 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig3. Capacitance vs. Reverse voltage Rev.6.00, Dec.15.2003, page 3 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0202A 0.08 D=1/6 0A t T Tj = 25°C t D=— T sin(θ=180°) D=1/3 D=1/2 DC 0.25 Reverse power dissipation Pd (W) 0V Forward power dissipation Pd (W) 0.20 T Tj = 125°C t t D=— T D=5/6 D=2/3 D=1/2 sin(θ=180°) 0.06 0.15 0.04 0.10 0.02 0.05 0 0 0.02 0.04 0.06 0.08 0.1 Forward current IF (A) Fig4. Forward power dissipation vs. Forward current 0 0 5 10 15 20 25 Reverse voltage VR (V) Fig5. Reverse power dissipation vs. Reverse voltage 0.12 Average rectified current IO (A) 0.25 Average rectified current IO (A) 0.10 DC 0.08 0.06 0.04 0.02 Tj =125°C 0 −25 VR=VRRM/2 Rth(j-a)=350°C/W Per one device sin(θ=180°) D=1/2 D=1/3 D=1/6 0.20 sin(θ=180°) D=1/2 D=1/3 D=1/6 DC 0.15 0.10 0.05 VR=VRRM/2 Tj =125°C Rth(j-a)=350°C/W Two device total 0 25 50 75 100 125 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature Ambient temperature Ta (°C) Fig.7 Average rectified current vs. Ambient temperature Rev.6.00, Dec.15.2003, page 4 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0202A Package Dimensions As of January, 2003 .


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