Document
HRW0202A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0152-0600Z (Previous: ADE-208-209E) Rev.6.00 Dec.15.2003
Features
• Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRW0202A Laser Mark S17 Package Code MPAK
Pin Arrangement
3
2 1 (Top View)
1. Anode 2. Anode 3. Cathode
Rev.6.00, Dec.15.2003, page 1 of 5
Free Datasheet http://www.datasheet4u.com/
HRW0202A
Absolute Maximum Ratings *1
(Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse Symbol VRMM * IO * Tj Tstg
2 3 1
Value 20 200 3 125 –55 to +125
Unit V mA A °C °C
IFSM *
Electrical Characteristics *1
(Ta = 25°C)
Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min — — — Typ — — 350 Max 0.40 50 — Unit V µA Test Condition IF = 100 mA VR = 20 V
*2
°C/W Polyimide board
Notes: 1. Per one device 2. Polyimide board
20h×15w×0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
Rev.6.00, Dec.15.2003, page 2 of 5
Free Datasheet http://www.datasheet4u.com/
HRW0202A
Main Characteristic
1.0 Pulse test 10–1 Ta = 75°C 10
–4
10–3 Pulse test
Ta = 75°C
10–2
Reverse current IR (A)
Forward current IF (A)
10–5
Ta = 25°C
10–3 Ta = 25°C
10–6
10
–4
10–5
10–7
10–6
0
0.1
0.2
0.3
0.4
0.5
0.6
10–8
0
5
10
15
20
25
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
100 f = 1MHz Pulse test
Capacitance C (pF)
10
1.0 1.0
10 Reverse voltage VR (V)
40
Fig3. Capacitance vs. Reverse voltage
Rev.6.00, Dec.15.2003, page 3 of 5
Free Datasheet http://www.datasheet4u.com/
HRW0202A
0.08
D=1/6 0A t T Tj = 25°C t D=— T sin(θ=180°) D=1/3 D=1/2 DC
0.25
Reverse power dissipation Pd (W)
0V
Forward power dissipation Pd (W)
0.20
T Tj = 125°C
t t D=— T D=5/6 D=2/3 D=1/2 sin(θ=180°)
0.06
0.15
0.04
0.10
0.02
0.05
0 0 0.02 0.04 0.06 0.08 0.1 Forward current IF (A) Fig4. Forward power dissipation vs. Forward current
0
0
5
10
15
20
25
Reverse voltage VR (V) Fig5. Reverse power dissipation vs. Reverse voltage
0.12
Average rectified current IO (A)
0.25
Average rectified current IO (A)
0.10 DC 0.08 0.06 0.04 0.02 Tj =125°C 0 −25
VR=VRRM/2 Rth(j-a)=350°C/W Per one device sin(θ=180°) D=1/2 D=1/3 D=1/6
0.20
sin(θ=180°) D=1/2 D=1/3 D=1/6
DC
0.15
0.10 0.05 VR=VRRM/2
Tj =125°C Rth(j-a)=350°C/W Two device total
0
25
50
75
100 125
0 −25
0
25
50
75
100 125
Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature
Ambient temperature Ta (°C) Fig.7 Average rectified current vs. Ambient temperature
Rev.6.00, Dec.15.2003, page 4 of 5
Free Datasheet http://www.datasheet4u.com/
HRW0202A
Package Dimensions
As of January, 2003
.