DatasheetsPDF.com

HRW0302A

Renesas

Silicon Schottky Barrier Diode

HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z (Previous: ADE-208-015G) Rev.8.00 Dec.15.2003 F...


Renesas

HRW0302A

File Download Download HRW0302A Datasheet


Description
HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z (Previous: ADE-208-015G) Rev.8.00 Dec.15.2003 Features Low forward voltage drop and suitable for high efficiency rectifying. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0302A Laser Mark S11 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. NC 2. Anode 3. Cathode Rev.6.00, Dec.15.2003, page 1 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6 2. 10ms sine wave 1 pulse Symbol VRMM * IO * Tj Tstg 1 2 1 Value 20 300 3 125 –55 to +125 Unit V mA A °C °C IFSM * Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Note: Symbol VF IR C Rth(j-a) Min — — — — Typ — — — 340 Max 0.40 100 100 — Unit V µA pF °C/W Test Condition IF = 300 mA VR = 20 V VR = 0 V, f = 1 MHz Polyimide board *1 1. Polyimide board 20h×15w×0.8t 1.5 3.0 1.5 1.5 0.8 Unit: mm Rev.8.00, Dec.15.2003, page 2 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0302A Main Characteristic 10 Pulse test 1.0 Reverse current IR (A) Forward current IF (A) Ta = 75°C 10–1 Pulse test 10–2 10–1 10–2 Ta = 25°C 10–3 Ta = 75°C 10–4 Ta = 25°C 10 –3 10 –4 10–5 10–5 0 0.2 0.4 0.6 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)