HRW0503A

HRW0503A Silicon Schottky Barrier Diode for Rectifying REJ03G0158-0400Z (Previous: ADE-208-016C) Rev.4.00 Jan.06.2004 Features Low forward voltage drop and suitable for high efficiency rectifying. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0503A Laser Mark S6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. NC 2. Anode 3. Cathode Rev.6.00, Jan.06.2004, page 1 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0503A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM * IO * Tj Tstg 1 1 Value 30 500 Unit V mA A °C °C IFSM * 2 5 125 –55 to +125 Notes: 1. See from Fig.1 to Fig.5, with polyimide board 2. 50 Hz sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ — — 65 Max 0.55 50 — Unit V µA pF Test Condition IF = 500 mA VR = 30 V VR = 0 V, f = 1 MHz Rev.6.00, Jan.06.2004, page 2 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0503A Main Characteristic 1.0 Tj = 25°C 10–1 Tj = 125°C Forward current IF (A) 10–1 Reverse current IR (A) 10–2 10–2 10–3 0 0.2 0.4 0.6 0.8 10–3 0 5 10 15 20 25 30 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 0.40 Forward powe...