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HSB88YP Dataheets PDF



Part Number HSB88YP
Manufacturers Renesas
Logo Renesas
Description Silicon Schottky Barrier Diode
Datasheet HSB88YP DatasheetHSB88YP Datasheet (PDF)

HSB88YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0590-0200 (Previous: ADE-208-932A) Rev.2.00 Apr 01,2005 Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB88YP Laser Mark C1 Package Name CMPAK-4 Package Code (Previous Code) PTSP0004ZB-A (CMPAK-4) Pin Arrangement 4 3 4 3 C1 1 (Top View) 2 1 (Top View) 2 1. Anode 2. Anode 3. Cathode 4. Cathode Rev.2.00.

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HSB88YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0590-0200 (Previous: ADE-208-932A) Rev.2.00 Apr 01,2005 Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB88YP Laser Mark C1 Package Name CMPAK-4 Package Code (Previous Code) PTSP0004ZB-A (CMPAK-4) Pin Arrangement 4 3 4 3 C1 1 (Top View) 2 1 (Top View) 2 1. Anode 2. Anode 3. Cathode 4. Cathode Rev.2.00 Apr 01, 2005 page 1 of 4 Free Datasheet http://www.datasheet4u.com/ HSB88YP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device. VR IO * Tj 1 Symbol Value 10 15 125 −55 to +125 Unit V mA °C °C Tstg Electrical Characteristics *1 (Ta = 25°C) Item Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation 2 ESD-Capabilityme * Symbol VF1 VF2 IR1 IR2 C ∆C ∆VF — Min 0.350 0.500 — — — — — 30 Typ — — — — — — — — Max 0.420 0.580 0.2 10 0.80 0.10 10 — Unit V µA pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2 V Rev.2.00 Apr 01, 2005 page 2 of 4 Free Datasheet http://www.datasheet4u.com/ HSB88YP Main Characteristic 10-2 10-6 Ta = 75°C Forward current IF (A) Reverse current IR (A) 10-3 10-7 10-4 Ta= 75°C 10-8 Ta = 25°C 10-5 Ta= 25°C Ta= −25°C 10-9 Ta= −25°C 10-6 0 0.2 0.4 0.6 0.8 10-10 0 2 4 6 8 10 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 0.1 0.1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance vs. Reverse voltage Rev.2.00 Apr 01, 2005 page 3 of 4 Free Datasheet http://www.datasheet4u.com/ HSB88YP Package Dimensions JEITA Package Code SC-82 RENESAS Code PTSP0004ZB-A Previous Code CMPAK-4(D) / CMPAK-4(D)V MASS[Typ.] 0.006g D e Q c E HE L A A b e e Reference Dimension in Millimeters A Symbol A1 e1 b l1 b2 c A — A Section Pattern of terminal position areas A A1 b c D E e HE L b2 e1 l1 Q Min 0.8 0 0.25 0.1 1.8 1.15 1.9 - Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2 Max 1.0 0.1 0.35 0.26 2.2 1.35 2.3 0.45 0.9 - Rev.2.00 Apr 01, 2005 page 4 of 4 Free Datasheet http://www.datasheet4u.com/ Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the infor.


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