HSB88AS
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-964 (Z) Rev. 0 Aug. 2000 Features
• Low reverse...
HSB88AS
Silicon
Schottky Barrier Diode for High Speed Switching
ADE-208-964 (Z) Rev. 0 Aug. 2000 Features
Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB88AS Laser Mark C1 Package Code CMPAK
Pin Arrangement
3
2
1
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Free Datasheet http://www.datasheet4u.com/
HSB88AS
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device. Symbol VR IO * Tj Tstg Value 10 15 125 −55 to +125 Unit V mA °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Forward voltage Symbol Min VF1 VF2 Reverse current IR1 IR2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capabilityme *
2
Typ
Max
Unit
Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
0.350 0.500 30
0.420 V 0.580 0.2 10 0.80 0.10 10 pF pF mV V µA
C ∆C ∆VF
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2V
Rev.0, Aug. 2000, page 2 of 5
Free Datasheet http://www.datasheet4u.com/
HSB88AS
Main Characteristic
10-2 10
-5
Reverse current I R (A)
Forward current I F (A)
10
-3
10
-6
Ta=75°C 10
-7
10
-4
Ta=75°C Ta=25°C
10 -5
10
-8
Ta=25°C
10
-6
10 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward vo...
