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HSB88WK

Hitachi

Silicon Schottky Barrier Diode

HSB88WK Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1042 (Z) Rev. 0 Jan. 2001 Features • Proof agai...


Hitachi

HSB88WK

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HSB88WK Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1042 (Z) Rev. 0 Jan. 2001 Features Proof against high voltage. CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB88WK Laser Mark C4 Package Code CMPAK Outline 3 2 1 (Top View) 1. Anode 2. Anode 3. Cathode Free Datasheet http://www.datasheet4u.com/ HSB88WK Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device. Symbol VR I O* Tj Tstg 1 Value 10 15 125 −55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability * 1 Typ — — — — — — — — Max 420 580 0.2 10 0.80 0.10 10 — Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V 350 500 — — — — — 30 C ∆C ∆ VF — pF pF mV V VR = 0V, f = 1 MHz VR = 0V, f = 1 MHz I F = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Note: Failure criterion ; IR > 0.4µA at VR = 2 V 2 Free Datasheet http://www.datasheet4u.com/ HSB88WK Main Characteristic 10−2 10−5 Forward current IF (A) 10−3 Reverse current IR (A) 10−6 Ta = 75°C 10−7 10−4 Ta = 75°C Ta = 25°C 10−5 10−8 Ta = 25°C 10−6 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10−9 0 5 10 15 Reverse voltage VR (V) ...




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