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UT40N03 Dataheets PDF



Part Number UT40N03
Manufacturers UTC
Logo UTC
Description N-CHANNEL POWER MOSFET
Datasheet UT40N03 DatasheetUT40N03 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UT40N03 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness „ FEATURES * RDS(ON) = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halo.

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UNISONIC TECHNOLOGIES CO., LTD UT40N03 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness „ FEATURES * RDS(ON) = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT40N03L-TN3-R UT40N03G-TN3-R UT40N03L-TM3-T UT40N03G-TM3-T Package TO-252 TO-251 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-160.C Free Datasheet http://www.datasheet4u.com/ UT40N03 „ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) SYMBOL VDSS VGSS ID IDM PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power MOSFET RATINGS UNIT 30 V ±20 V 40 A 169 A TO-251 50 W Total Power Dissipation PD W TO-252 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL TO-251 TO-252 TO-251 TO-252 θJA θJC RATINGS 62 62 2.5 2.5 UNIT ℃/W ℃/W ℃/W ℃/W Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS =0 V, ID =250 µA VDS =30 V, VGS =0 V, TJ=25℃ VGS = ±20V VDS =VGS, ID =250 µA VGS =10 V, ID =20 A VGS=4.5 V, ID =16 A MIN 30 1 ±100 1 14 20 800 380 133 7.2 60 22.5 10 17 3 10 1.3 40 A 169 3 17 23 TYP MAX UNIT V µA nA V mΩ PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance CISS VDS =25 V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS =15 V, ID=20 A, VGS =10V, RG =3.3 Ω, RL =0.75 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =24V,VGS =5 V,ID =20 A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD TJ=25℃, IS=40A, VGS=0V Maximum Continuous Drain-Source IS VD=VG=0V , VS=1.3V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. pF ns nC V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-160.C Free Datasheet http://www.datasheet4u.com/ UT40N03 „ TYPICAL CHARACTERISTICS Typical Output Characteristics TC=25℃ 150 Drain Current,ID (A) VG=10V VG=8.0V VG=6.0V 100 Drain Current,ID (A) 100 150 TC=150℃ Power MOSFET Typical Output Characteristics VG=10V VG=8.0V VG=6.0V 50 VG=4.0V VG=3.0V 50 VG=4.0V VG=3.0V 0 0 1 2 3 4 5 7 8 6 Drain-to-Source Voltage,VDS (V) 9 0 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage,VDS (V) 28 26 On-Resistance,RDS(ON) (mΩ) 24 22 20 18 16 14 12 3 On-Resistance vs. Gate Voltage Normalized On-Resistance,RDS(ON) ID=20A TC=25℃ 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 Normalized On-Resistance vs. Junction Temperature ID=20A VG=10V 4 5 6 7 8 9 10 Gate-to-Source Voltage,VGS (V) 11 0 50 100 Junction Temperature,TJ (℃) 150 Drain Current,ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power,PD (W) 3 of 5 QW-R502-160.C Free Datasheet http://www.datasheet4u.com/ UT40N03 „ TYPICAL CHARACTERISTICS(Cont.) 100 Reverse Drain Current,IS (A) Forward Characteristics of Reverse Diode Gate Threshold Voltage,VGS(TH) (V) 3 Power MOSFET Gate Threshold Voltage vs. Junction Temperature 10 TJ=150℃ TJ=25℃ 2 1 1 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Body Diode Forward Voltage,VSD (V) 0 -50 0 100 50 Junction Temperature,TJ (℃) 150 Gate to Source Voltage,VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Normalized Thermal Response,RthJC Drain Current,ID (A) Capacitance,C (pF) 4 of 5 QW-R502-160.C Free Datasheet http://www.datasheet4u.com/ UT40N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information pres.


ZK2000-2100-0xxx UT40N03 UT40N03T


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