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UT4392

UTC

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT4392 15A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UT4392 uses UTC a...


UTC

UT4392

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Description
UNISONIC TECHNOLOGIES CO., LTD UT4392 15A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UT4392 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used in such applications: high-Side DC/DC Conversion, notebook and sever.  FEATURES * RDS(ON) ≤ 11.5 mΩ @ VGS=10V, ID=12.5A RDS(ON) ≤ 16.5 mΩ @ VGS=4.5V, ID=10A * High Density Cell Design for Ultra Low On-resistance  SYMBOL SOP-8 1 DS DFN2020-6B  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 12345678 Packing UT4392L-S08-R UT4392G-S08-R SOP-8 S S S G D D D D Tape Reel UT4392L-K06B-2020-R UT4392G-K06B-2020-R DFN2020-6B D D G S D D - - Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-312.F UT4392  MARKING SOP-8 Power MOSFET DFN2020-6B UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-312.F UT4392 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 30 V VGSS ±20 V Continuous Drain Current Pulsed Drain Current ID 12.5 A IDM 50 A Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 3.6 mJ 1.2 V/ns Power Dissipation SOP-8 DFN2020-8 PD 1.5 2 W W Junction Temperature Storage Temperature TJ +150 °C...




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