N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT4392
15A, 30V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UT4392 uses UTC a...
Description
UNISONIC TECHNOLOGIES CO., LTD UT4392
15A, 30V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UT4392 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used in such applications: high-Side DC/DC Conversion, notebook and sever.
FEATURES
* RDS(ON) ≤ 11.5 mΩ @ VGS=10V, ID=12.5A RDS(ON) ≤ 16.5 mΩ @ VGS=4.5V, ID=10A
* High Density Cell Design for Ultra Low On-resistance
SYMBOL
SOP-8
1 DS DFN2020-6B
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment 12345678
Packing
UT4392L-S08-R
UT4392G-S08-R
SOP-8 S S S G D D D D Tape Reel
UT4392L-K06B-2020-R UT4392G-K06B-2020-R DFN2020-6B D D G S D D - - Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-312.F
UT4392
MARKING
SOP-8
Power MOSFET
DFN2020-6B
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-312.F
UT4392
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS
30
V
VGSS
±20
V
Continuous Drain Current Pulsed Drain Current
ID
12.5
A
IDM
50
A
Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4)
EAS dv/dt
3.6
mJ
1.2
V/ns
Power Dissipation
SOP-8 DFN2020-8
PD
1.5 2
W W
Junction Temperature Storage Temperature
TJ
+150
°C...
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