P-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UT4411
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UT4411 uses advanced trench technolog...
Description
UNISONIC TECHNOLOGIES CO., LTD
UT4411
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
Drain
Power MOSFET
Gate
Source
ORDERING INFORMATION
Ordering Number
UT4411G-S08-R Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8 S: Source
Pin Assignment 12345678
Packing
S S S G D D D D Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-191.D
UT4411
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS
±20 V
Continuous Drain Current
ID -8 A
Pulsed Drain Current
IDM -40 A
Power Dissipation
PD 3 W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient
SYMBOL MIN TYP θJA 54
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
MAX 75
UNIT °C/W
PARAMETER
SYMBOL
...
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