UT4413

UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION Power MOSFET The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL Drain *Pb-free plating product number: UT4413L Gate Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT4413-S08-R UT4413L-S08-R UT4413-S08-T UT4413L-S08-T Package SOP-8 SOP-8 Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-198.A Free Datasheet http://www.datasheet4u.com/ UT4413 „ PIN CONFIGURATION Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-198.A Free Datasheet http://www.datasheet4u.com/ UT4413 „ ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 1) ID -15 A Pulsed Drain Current (Note 2) IDM -80 A Power Dissipation(TC=25°C) PD 3 W ℃ Junction a Temperature TJ +150 ℃ Strong Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional de...