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UT4446 Dataheets PDF



Part Number UT4446
Manufacturers UTC
Logo UTC
Description N-Channel Power MOSFET
Datasheet UT4446 DatasheetUT4446 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UT4446 15A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT4446 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT4446 is generally applied in low power switching mode power appliances and electronic ballast.  FEATURES * RDS(ON) ≤ 7.8 mΩ @ VGS=10V, ID=12A RDS(ON) ≤ 13 mΩ @ VGS=4.5V, ID=9.0A * High Switching Speed * Improved dv/dt capa.

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UNISONIC TECHNOLOGIES CO., LTD UT4446 15A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT4446 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT4446 is generally applied in low power switching mode power appliances and electronic ballast.  FEATURES * RDS(ON) ≤ 7.8 mΩ @ VGS=10V, ID=12A RDS(ON) ≤ 13 mΩ @ VGS=4.5V, ID=9.0A * High Switching Speed * Improved dv/dt capability  SYMBOL SOP-8 1 PDFN3×3  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT4446L-S08-R UT4446G-S08-R SOP-8 UT4446L-P3030-R UT4446G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel S S S G D D D D Tape Reel www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-251.E UT4446  MARKING SOP-8 Power MOSFET PDFN3×3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-251.E UT4446 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 15 A Pulsed Drain Current (Note 2) IDM 40 A Avalanche Energy Single Pulsed (Note 3) EAS 7.2 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation SOP-8 PDFN3×3 PD 1.38 W 1.66 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.1mH, IAS=12A, VDD=25V, RG=20Ω, Starting TJ=25°C. 4. ISD ≤ 15A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.  THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient SOP-8 PDFN3×3 θJA 90 75 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 9 QW-R502-251.E UT4446 Power MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS VGS=0V, ID=250μA VDS=30V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS=VGS, ID=250μA VGS=10V, ID=12A VGS=4.5V, ID=9.0A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=15V, f=1MHz SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time QG QGS QGD tD(ON) tR tD(OFF) tF VDS=15V, VGS=10V, ID=15A IG=1mA (Note1,2) VDS=15V, VGS=10V, ID=15A, RG=3.3Ω (Note1,2) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VSD IS=15A, VGS=0V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr IS=15A, VGS=0V, Qrr dIS/dt=100A/µs Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Essentially independent of operating temperature. MIN TYP MAX UNIT 30 V 1 μA 100 nA -100 nA 1.0 3.0 V 5.8 7.8 mΩ 9.0 13 mΩ 1280 pF 270 pF 229 pF 44 nC 5 nC 10.5 nC 7 ns 17 ns 33 ns 23 ns 15 A 40 A 1.5 V 250 ns 1200 nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R502-251.E UT4446  TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + + ISD - VDS - L RG Driver VDD * dv/dt controlled by RG VGS Same Type as D.U.T. * ISD controlled by pulse period * D.U.T.-Device Under Test VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-251.E UT4446  TEST CIRCUITS AND WAVEFORMS Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS Same Type as D.U.T. QG VDS QGS QGD VGS DUT Fig. 3A Gate Charge Test Circuit Charge Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R502-251.E UT4446  TYPICAL CHARACTERISTICS GS Power MOSFET UNI.


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