Document
UNISONIC TECHNOLOGIES CO., LTD UT4446
15A, 30V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UT4446 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
The UTC UT4446 is generally applied in low power switching mode power appliances and electronic ballast.
FEATURES
* RDS(ON) ≤ 7.8 mΩ @ VGS=10V, ID=12A RDS(ON) ≤ 13 mΩ @ VGS=4.5V, ID=9.0A
* High Switching Speed * Improved dv/dt capability
SYMBOL
SOP-8 1
PDFN3×3
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UT4446L-S08-R
UT4446G-S08-R
SOP-8
UT4446L-P3030-R
UT4446G-P3030-R
PDFN3×3
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678
Packing
S S S G D D D D Tape Reel
S S S G D D D D Tape Reel
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QW-R502-251.E
UT4446
MARKING
SOP-8
Power MOSFET
PDFN3×3
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QW-R502-251.E
UT4446
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
15
A
Pulsed Drain Current (Note 2)
IDM
40
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
7.2
mJ
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
SOP-8 PDFN3×3
PD
1.38
W
1.66
W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=12A, VDD=25V, RG=20Ω, Starting TJ=25°C. 4. ISD ≤ 15A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
SOP-8 PDFN3×3
θJA
90 75
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W °C/W
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www.unisonic.com.tw
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QW-R502-251.E
UT4446
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
VGS=0V, ID=250μA VDS=30V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
VDS=VGS, ID=250μA VGS=10V, ID=12A VGS=4.5V, ID=9.0A
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=15V, f=1MHz
SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDS=15V, VGS=10V, ID=15A IG=1mA (Note1,2)
VDS=15V, VGS=10V, ID=15A, RG=3.3Ω (Note1,2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=15A, VGS=0V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
IS=15A, VGS=0V,
Qrr
dIS/dt=100A/µs
Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
30
V
1 μA
100 nA
-100 nA
1.0
3.0 V
5.8 7.8 mΩ
9.0 13 mΩ
1280
pF
270
pF
229
pF
44
nC
5
nC
10.5
nC
7
ns
17
ns
33
ns
23
ns
15 A
40 A
1.5 V
250
ns
1200
nC
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UT4446
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
+ ISD
-
VDS -
L
RG
Driver
VDD
* dv/dt controlled by RG
VGS
Same Type as D.U.T.
* ISD controlled by pulse period * D.U.T.-Device Under Test
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UT4446
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
Same Type
as D.U.T.
QG
VDS
QGS
QGD
VGS DUT
Fig. 3A Gate Charge Test Circuit
Charge Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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UT4446
TYPICAL CHARACTERISTICS
GS
Power MOSFET
UNI.