UT45N03

UNISONIC TECHNOLOGIES CO., LTD UT45N03 40A, 25V N-CHANNEL POWER MOSFET „ FEATURES Power MOSFET * RDS(ON) = 21mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel Ordering Number Lead Free Halogen Free UT45N03L-TM3-R UT45N03G-TM3-R UT45N03L-TN3-T UT45N03G-TN3-T UT45N03L-TN3-R UT45N03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-165.C Free Datasheet http://www.datasheet4u.com/ UT45N03 „ ABSOLUTE MAXIMUM RATINGS Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current ID 40 A Pulsed Drain Current (Note 1) IDM 160 A Power Dissipation 65 W PD Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA SYMBOL θJA θJC RATINGS 50 1.92 UNIT °C/W °C/W PARAMETER Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=250μA VDS=25V, VGS =0V VDS =0V, VGS = ±5V VD...