FDB33N25 250V N-Channel MOSFET
September 2005
UniFET
FDB33N25
250V N-Channel MOSFET Features
• 33A, 250V, RDS(on) = 0....
FDB33N25 250V N-Channel MOSFET
September 2005
UniFET
FDB33N25
250V N-Channel MOSFET Features
33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDB33N25
250 33 20.4 132 ±30 918 33 23.5 4.5 235 1.89 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA* RθJA
Parameter
Thermal Resista...