SI4477DY

Si4477DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES ID (A)d - 26.6 - 20.6 Qg (Typ.) 59 nC PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.0062 at VGS = - 4.5 V 0.0105 at VGS = - 2.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Adapter Switch - Notebook - Game Station 8 7 6 5 Top View Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D D D D G SO-8 S S S G 1 2 3 4 S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 20 ± 12 - 26.6 - 21.3 - 18a, b - 14.5a, b - 60 - 5.5 - 2.5a, b 30 45 6.6 4.2 3a, b 1.95a, b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 °C/W. d. Based on TC = 25 °C. Document Number: 64829 S09-0858-Rev. A, 18-May-09 www.vishay....