NTMD4N03

NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features Designed for use in low voltage, high speed switching applications Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature SO−8 Surface Mount Package − Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Converters Computers Printers Cellular and Cordless Phones Disk Drives and Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg 30 "20 4.0 12 2.0 −55 to +150 Unit V V Adc Apk W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 4.45 Apk, L = 8 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) EAS RqJA 80 mJ 62.5 °C/W Maximum Lead Temperature for Soldering Purposes for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum ...