DatasheetsPDF.com

NVMFD5852NL Dataheets PDF



Part Number NVMFD5852NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVMFD5852NL DatasheetNVMFD5852NL Datasheet (PDF)

NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5852NLWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Sou.

  NVMFD5852NL   NVMFD5852NL



Document
NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5852NLWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 44 A 31 27 W 13 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 3 & 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1 & 3) State TA = 25°C PD TA = 100°C 15 A 10.6 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 329 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 40 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 40 A EAS 80 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) RYJ−mb 5.6 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second are higher but are dependent on pulse duration and duty cycle. http://onsemi.com V(BR)DSS 40 V RDS(on) MAX 6.9 mW @ 10 V 12.0 mW @ 4.5 V ID MAX 44 A Dual N−Channel D1 D2 G1 G2 S1 S2 MARKING DIAGRAM 1 DFN8 5x6 (SO8FL) CASE 506BT D1 D1 S1 D1 G1 5852xx D1 S2 AYWZZ D2 G2 D2 D2 D2 5852NL = Specific Device Code for NVMFD5852NL 5852LW = Specific Device Code for NVMFD5852NLWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping† NVMFD5852NLT1G DFN8 1500 / Tape & (Pb−Free) Reel NVMFD5852NLWFT1G DFN8 1500 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 1 September, 2014 − Rev. 6 Publication Order Number: NVMFD5852NL/D NVMFD5852NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) IDSS IGSS VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.4 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES RDS(on) gFS VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 5 V, ID = 5 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge QGD QG(TOT) SWITCHING CHARACTERISTICS (Note 6) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, VDS = 32 V, ID = 20 A VGS = 10 V, VDS = 32V, ID = 20 A Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf VGS = 4.5 V, VDS = 32 V, ID = 20 A, RG = 2.5 W VGS = 10 V, VDS = 32 V, ID = 20 A, RG = 2.5 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = 20 A TJ = 25°C TJ = 125°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. Typ Max Unit V 37.3 mV/°C 1.0 mA 100 ±100 nA 2.4 V 6.3 mV/°C 5.3 6.9 mW 8.7 12 24 S 1800 pF 2.


NTMD4N03 NVMFD5852NL NVMFD5852NLWF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)